E-beam lithography

E-beam lithography differs from photo and EUV lithography by exposure radiation. These are no longer electromagnetic waves, but a stream of charged particles. Electrons are very light particles (2000 times lighter than protons, with the same electric charge). Therefore, the electron beam is quite easy to control (accelerate, focus, deflect) using special electromagnetic systems. When electrons hit the resist, they scatter and charge it and the substrate. This, of course, degrades the quality (clarity) of the "image" in the resist. But this can be fought. As a result, the resolution in electron lithography is much higher than in photolithography.

The main "problem" of electronic lithography is performance. "Drawing" with an electron beam cannot be compared in speed with optical "area printing". However, high resolution has made electron lithography indispensable in the production (for example, masks for photolithography).